| PART |
Description |
Maker |
| M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70XL M |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
|
| M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM
|
Toshiba
|
| M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-8 |
32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28
32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
From old datasheet system
|
Maxim Integrated Products, Inc.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CXK5T8257BM CXK5T8257BM-10LLX CXK5T8257BM-12LLX CX |
32768-word X 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
524288-BIT CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| UPD27C256A |
32768 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
